by Barbara Aichinger | Jan 16, 2019 | LPDDR4 Memory
Hello Memory Enthusiasts! Please see here a guest post by the distinguished Patrick Moran Thanks Pat for allowing the repost! LPDDR4 was introduced in 2014 about two years after LPDDR3. This was probably the fastest transition for a new generation memory ever in JEDEC history. New products and features being introduced into the mobile ecosystem requiring faster and lower power memory propelled the fast development. LPDDR4 succeeded in increasing maximum data rates from 1866 Mbps to 3200 Mbps. But active power results for initial products were disappointing since operating voltage was reduced by only 7%. The industry responded with LPDDR4X early in 2017. The ‘X’ stands for ‘eXtra’ or ‘eXtended’. It headlined lower I/O voltage to save system power and new features to kick the data rate from 3200 to 4266 Mbps. Today it has replaced the original LPDDR4 for new designs (LPDDR4 remains available for legacy systems.) Think of LPDDR4X as LPDDR4 done right. What makes a good LP DRAM and where did LPDDR4 come up short? Two things really – active power and standby power. Maximum active power occurs when the mobile device is operating at full speed, for example playing an action game, and includes memory device power and the power the system uses to operate the memory. An aggressive goal for a new generation of LP DRAM might be the same power at its full speed for the new generation LP DRAM. For example, a LPDDR4 at its max speed of 3200 Mbps might consume the same power as a LPDDR3 operating at its max speed of 1600 Mbps. The least aggressive goal would be that...
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